2SJ464(F) datasheet

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• Маркировка
  2SJ464(F)
• Производитель
  TOSHIBA Semiconductor
• Описание
  TOSHIBA Semiconductor 2SJ464(F) Configuration: Single Continuous Drain Current: 18 A Current - Continuous Drain (id) @ 25?° C: 18A Drain To Source Voltage (vdss): 100V Drain-source Breakdown Voltage: - 100 V Fet Feature: Logic Level Gate Fet Type: MOSFET P-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 140nC @ 10V Gate-source Breakdown Voltage: +/- 20 V Input Capacitance (ciss) @ Vds: 2900pF @ 10V Mounting Style: Through Hole Mounting Type: Through Hole Package / Case: 2-10R1B Power - Max: 45W Power Dissipation: 45 W Rds On (max) @ Id, Vgs: 90 mOhm @ 9A, 10V Resistance Drain-source Rds (on): 0.09 Ohms Series: - Transistor Polarity: P-Channel Vgs(th) (max) @ Id: 2V @ 1mA
• Количество страниц
  6 шт.
• Формат
  PDF

  (Для просмотра требуется Adobe Acrobat Reader)
• Размер файла
  817,81 KB

2SJ464(F) datasheet скачать

2SJ464(F) datasheet